The attractiveness of graphene, which is an array of carbon atoms one atom thick, lies in the high mobility of the electrons. If taking an account this parameter graphene is better than silicon, at least 40 times better. However, there are technical difficulties with using a high density material with a high rate of saturation. IBM has not yet come to mass production of their chips based on graphene - the researchers created only a few devices and simple integrated circuits.
IBM managed to advance on the path to mass production using 200 mm plates and techno-process which "is compatible with CMOS».
Excellent electrical qualities of graphene make it inert; making it difficult to form any layers on top of the graphene layer (it is particularly difficult to apply a layer of dielectric, insulating the gate). Scientists decided to go on reverse: first create the necessary structures on a silicon wafer, and then apply graphene layers using vacuum deposition. When graphene areas are formed contacts can be connected to the source and drain of the gate. So this is how IBM managed to create full field - effect transistors.
Frequency repeater shown on the picture consists of a few transistors and passive components. The transmission coefficient of the repeater is equal to -25 dB at an output frequency of 2 GHz.
